GaN HEMT 功率芯片
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MarkingVDS, maxIDID,pulseVGSRDSONIDSSIGSS (Typ.)Tj View
GJ500D450NA01500V9.5A14A-30 to 0 V380-450mΩ<1uA5nA-55 to +150℃ view
GJ650D450NA01650V9.5A14A-30 to 0 V380-450mΩ<1uA5nA-55 to +150℃ view
GJ900D450NA01900V9.0A14A-30 to 0 V380-450mΩ<1uA6nA-55 to +150℃ view
GJ1200D450NA011200V8.5A14A-30 to 0 V380-450mΩ<1uA8nA-55 to +150℃ view
GJ500D1000NA01500V2.0A4A-30 to 0 V800-1000mΩ<1uA5nA-55 to +150℃ view
GJ650D1000NA01650V2.0A4A-30 to 0 V800-1000mΩ<1uA5nA-55 to +150℃ view
GJ900D1000NA01900V1.8A3A-30 to 0 V800-1000mΩ<1uA5nA-55 to +150℃ view
GJ1200D1000NA011200V1.6A3A-30 to 0 V800-1000mΩ<1uA5nA-55 to +150℃ view
GJ500D225NA01500V18A25A-30 to 0 V225-240mΩ<1uA5nA-55 to +150℃ view
GJ650D225NA01650V15A25A-30 to 0 V225-240mΩ<1uA5nA-55 to +150℃ view
GJ900D225NA01900V13A25A-30 to 0 V225-240mΩ<1uA5nA-55 to +150℃ view
GJ1200D225NA011200V12.5A20A-30 to 0 V225-240mΩ<1uA5nA-55 to +150℃ view
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